FYPF2010DNTU【PDF 1/4 页】DIODE SCHOTTKY 100V 20A TO-220F

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Sheet目录79

[1页]2页 3页 4页

?2002 Fairchild Semiconductor Corporation

Rev. A, September 2002

FYPF2010DN

20A SCHOTTKY BARRIER RECTIFIER

Absolute Maximum Ratings (per diode) TC=25°°°°C unless otherwise noted

Thermal Characteristics

Electrical Characteristics (per diode) TC=25 °°°°C unless otherwise noted

* Pulse Test: Pulse Width=300μs, Duty Cycle=2%

Symbol Parameter Value Units

VRRM

Maximum Repetitive Reverse Voltage 100 V

Maximum DC Reverse Voltage 100 V

IF(AV)

Maximum Average Rectified Current @ TC

= 105

°C20 A

IFSM

Maximum Forward Surge Current (per diode)

60Hz Single Half-Sine Wave

150 A

TJ, TSTG

Operating Junction and Storage Temperature -65 to +150

°C

Symbol Parameter Value Units

RθJC

Maximum Thermal Resistance, Junction to Case (per diode) 2.8

°C/W

Symbol Parameter Min. Typ. Max. Units

VFM *

Maximum Instantaneous Forward Voltage

= 10A

= 20A

= 25

°C

0.77

= 125

°C

0.65

= 25

°C

= 125

°C

0.75

IRM *

Maximum Instantaneous Reverse Current

(per diode) @ rated VR

= 25

0.1

= 125

°C

FYPF2010DN

Features

? Low forward voltage drop

? High frequency properties and switching speed

? Guard ring for over-voltage protection

Applications

? Switched mode power supply

? Freewheeling diodes

? Polarity protection

TO-220F

1 2 3

1. Anode 2.Cathode 3. Anode

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